Thin film transistor formed on flexible substrate and method of manufacturing the same

ABSTRACT

A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.11/756,766, filed on Jun. 1, 2007, which claims priority to KoreanPatent Application No. 10-2006-0049993, filed on Jun. 2, 2006, and allthe benefits accruing therefrom under 35 U.S.C. §119, the contents ofwhich in its entirety are herein incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a thin film transistor (“TFT”) formedon a flexible substrate and a method of manufacturing the same, and moreparticularly, to a TFT formed on a flexible substrate having uniformcharacteristics and a method of manufacturing the same.

2. Description of the Related Art

Cathode ray tube (“CRT”) displays are rapidly replaced by flat paneldisplays in the present display markets. Leading flat panel displaysinclude liquid crystal displays (“LCDs”) and plasma display panels(“PDPs”). In flat panel displays, thin film transistors (“TFTs”) areusually used as switching devices.

As techniques that can form TFTs at a low temperature are introduced,the TFTs are formed on a flexible substrate such as transparent plasticor glass. As the flexible substrate is used, the flat panel displays canbe modified to various forms and the application field thereof can bewidened. However, problems occur in the process of forming the TFT onthe flexible substrate. For example, according to the location in theflexible substrate where the TFT is formed, the characteristics of theTFT vary.

The variation of characteristics of a TFT according to the location willnow be described through a process of forming the TFT on a flexiblesubstrate.

FIG. 1 is a cross-sectional view illustrating a conventional TFT of theprior art formed on a mask aligning reference position of a flexiblesubstrate.

Referring to FIG. 1, a poly silicon film 12 is formed on a flexibleglass substrate 10. The poly silicon film 12 is divided into severalregions. That is, the poly silicon film 12 includes separated first andsecond N+ or P+ dopant regions 14 and 16, a channel region 18, and firstand second off-set regions, or lightly doped drain (“LDD”) regions, a1and a2. The channel region 18 is located between the first and second N+or P+ dopant regions 14 and 16, and is separated from the first andsecond N+ or P+ dopant regions 14 and 16 by the first and second off-setregions a1 and a2, respectively. The first and second off-set regions a1and a2 are not doped with a conductive dopant. The first off-set regiona1 is located between the first N+ or P+ dopant region 14 and thechannel region 18, and the second off-set region a2 is located betweenthe second N+ or P+ dopant region 16 and the channel region 18. A gateoxide film 20 is formed on the channel region 18 of the poly siliconfilm 12. A gate electrode 22 is formed on the gate oxide film 20. Thegate oxide film 20 is a silicon dioxide SiO₂ film, and the gateelectrode 22 is a metal electrode formed of aluminum neodymium AlNd etc.

As described above, the conventional TFT formed on a mask aligningreference position of a flexible substrate includes the first and secondoff-set regions (or LDD) a1 and a2 which are symmetrical with respect tothe channel region 18. Therefore, the conventional TFT that has off-setregions as depicted in FIG. 1 has a smaller leakage current than aconventional TFT that does not have the off-set regions. However, theconventional TFT has the following drawbacks. That is, in the TFT formedon a mask aligning reference position as depicted in FIG. 1, the firstand second off-set regions (or LDD) a1 and a2 are symmetrical withrespect to the channel region 18, but in the TFT formed on a locationseparated from the mask aligning reference position as depicted in FIG.2, the first and second off-set regions (or LDD) a1 and a2 areasymmetrical with respect to the channel region 18 and one of the twooff-set regions, in the illustrated case the first off-set region a1, isalmost not present. This is because an aligning error of the TFT formedon a location separated from the mask aligning reference positionexceeds an error tolerance in aligning a mask used for forming the gateelectrode due to thermal expansion of the flexible glass substrate 10during various processes prior to forming the gate electrode 22. As theTFT depicted in FIG. 2, if the first off-set region a1 is almost notpresent and the second off-set region a2 is relatively wide, thepossibility of causing a leakage current between the first N+ or P+dopant region 14 and the gate electrode 22 increases.

In the case of the conventional TFT formed on a flexible substrate asdescribed above, there is almost no leakage current problem when theconventional TFT is formed on the mask aligning reference position, butthe conventional TFT formed on a location separated from the maskaligning reference position is not free from the leakage currentproblem. Therefore, the conventional TFT formed on a flexible substratecan have different operation characteristics according to the forminglocation of the TFT even at the same operation condition.

BRIEF SUMMARY OF THE INVENTION

The present invention provides a thin film transistor (“TFT”) formed ona flexible substrate, the TFT having uniform characteristics, forexample, uniform leakage current regardless of where the TFT is formed.

The present invention also provides a method of manufacturing the TFT.

According to exemplary embodiments of the present invention, a TFTincludes a poly silicon layer formed on a flexible substrate andincluding a source region, a drain region, and a channel region, and agate stack formed on the channel region of the poly silicon layer,wherein the gate stack includes first and second gate stacks, and aregion of the poly silicon layer between the first and second gatestacks is an off-set region or a lightly doped drain (“LDD”) region.

The first and second gate stacks may be separated by a distance of about1 μm to about 5 μm.

The off-set region may be injected by a conductive dopant having a lowerconcentration than a concentration of the source and drain regions.

The first and second gate stacks may include a gate insulating film anda gate electrode sequentially stacked, and the gate insulating film maybe commonly used.

The channel region may include a first channel region disposed under thefirst gate stack and a second channel region disposed under the secondgate stack. The first channel region may be separated from the secondchannel region by the off-set region. The first channel region may bedisposed between the source region and the off-set region, and thesecond channel region may be disposed between the drain region and theoff-set region.

The poly silicon layer may be exposed between the first and second gatestacks.

According to other exemplary embodiments of the present invention, amethod of manufacturing a TFT includes forming a poly silicon layer on aflexible substrate, forming a gate insulating film on the poly siliconlayer, forming a gate electrode on a region of the gate insulating film,injecting a conductive dopant into the poly silicon layer around thegate electrode, forming a gate stack including the gate insulating filmand the gate electrode by removing the gate insulating film around thegate electrode, and dividing the gate stack into a first gate stack anda second gate stack by removing a portion of the gate stack.

The poly silicon layer may be annealed prior to dividing the gate stackinto the first and second gate stacks or after the gate stack is dividedinto the first and second gate stacks. The annealing may be performedusing a furnace or a laser.

After the conductive dopant is injected, the poly silicon layer may beannealed prior to removing the gate insulating film. The annealing atthis time may be performed using a furnace.

The first and second gate stacks may be separated by a distance of about1 μm to about 5 μm.

The forming of a poly silicon layer on a flexible substrate may furtherinclude forming an amorphous silicon (“a-Si”) layer on the flexiblesubstrate and annealing the amorphous silicon layer. The annealing atthis time may be performed using a furnace or a laser.

The method may further include forming an interlayer insulating layercovering the first and second gate stacks on the poly silicon layer,forming contact holes in the interlayer insulating layer that exposeregions of the poly silicon layer to which the conductive dopant isinjected, and forming electrodes filling the contact holes on theinterlayer insulating layer.

Dividing the gate stack into a first gate stack and a second gate stackmay include removing a portion of the gate stack until the poly siliconlayer is exposed.

According to still other exemplary embodiments of the present invention,a method of improving uniformity of off-set regions of TFTs formed on aflexible substrate includes forming a poly silicon layer on a flexiblesubstrate, the polysilicon layer including a source region, a drainregion, and a channel region for each TFT, forming a gate stack on eachchannel region of the poly silicon layer, and dividing each gate stackinto first and second gate stacks, wherein a region of the poly siliconlayer between each first and second gate stacks is an off-set region.

The use of the present invention allows each of the TFTs to have anidentical off-set region or an LDD region regardless of the location ofthe TFTs even if there is a mis-alignment between TFTs. Therefore, botha transistor that is formed on a mask aligning reference position and atransistor that is formed on a location separated from the mask aligningreference position can have identical device characteristics, forexample, leakage current.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings in which:

FIG. 1 is a cross-sectional view illustrating a conventional thin filmtransistor (“TFT”) of the prior art located on a mask aligning referenceposition of a flexible substrate;

FIG. 2 is a cross-sectional view illustrating a conventional TFT of theprior art formed on a location separated from a mask aligning referenceposition of the same flexible substrate on which the TFT of FIG. 1 isformed;

FIG. 3 is a cross-sectional view illustrating an exemplary TFT formed onan exemplary flexible substrate according to an exemplary embodiment ofthe present invention; and

FIGS. 4 through 10 are cross-sectional views illustrating an exemplarymethod of manufacturing an exemplary TFT formed on an exemplary flexiblesubstrate according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The invention will now be described more fully hereinafter withreference to the accompanying drawings, in which embodiments of theinvention are shown. This invention may, however, be embodied in manydifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. Likereference numerals refer to like elements throughout.

It will be understood that when an element is referred to as being “on”another element, it can be directly on the other element or interveningelements may be present there between. In contrast, when an element isreferred to as being “directly on” another element, there are nointervening elements present. As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of the present invention.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” or “includes” and/or “including” when used in thisspecification, specify the presence of stated features, regions,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

Spatially relative terms, such as “beneath”, “below”, “lower”, “above”,“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Embodiments of the present invention are described herein with referenceto cross section illustrations that are schematic illustrations ofidealized embodiments of the present invention. As such, variations fromthe shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, are to be expected. Thus,embodiments of the present invention should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing. For example, a region illustrated or described as flatmay, typically, have rough and/or nonlinear features. Moreover, sharpangles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the present invention.

An exemplary thin film transistor (“TFT”) formed on a flexible substrateand an exemplary method of manufacturing the TFT according to thepresent invention will now be described with reference to theaccompanying drawings in which exemplary embodiments of the inventionare shown. In the drawings, the thicknesses of layers and regions areexaggerated for clarity.

Hereinafter, a TFT formed on a flexible substrate according to anexemplary embodiment of the present invention will now be described.

FIG. 3 is a cross-sectional view illustrating an exemplary TFT formed onan exemplary flexible substrate according to an exemplary embodiment ofthe present invention.

Referring to FIG. 3, a poly silicon layer 44 is formed on a flexiblesubstrate 40. The poly silicon layer 44 includes first and second dopantregions 52 and 54 in which a conductive dopant is doped with highconcentration. The first and second dopant regions 52 and 54 areseparated from each other. The first and second dopant regions 52 and 54may include a dopant, for example, an N+ type dopant. One of the firstand second dopant regions 52 and 54, for example, the first dopantregion 52 may be a source region, and the second dopant region 54 may bea drain region. The poly silicon layer 44 also includes a channel region56 and an off-set region 58. The off-set region 58 is located betweenthe first and second dopant regions 52 and 54, but is separated from thefirst and second dopant regions 52 and 54 by the channel region 56. Theoff-set region 58 is not doped with a conductive dopant, and mayalternatively be doped with a low concentration if necessary. A firstchannel region 56 a of the channel region 56 is located between thefirst dopant region 52 and the off-set region 58, and a second channelregion 56 b of the channel region 56 is located between the off-setregion 58 and the second dopant region 54. A first gate stack S1 isformed on the first channel region 56 a of the poly silicon layer 44,and a second gate stack S2 is formed on the second channel region 56 bof the poly silicon layer 44. The first and second gate stacks S1 and S2are separated by, for example, about 1-5 μm, or more particularly about2-3 μm, from each other. The off-set region 58 may likewise be about 1-5μm in width. Both the first and second gate stacks S1 and S2 are formedby sequentially stacking a gate insulating film 46 and a gate electrode48. The gate insulating film 46 may be, for example, a silicon dioxideSiO₂ film, and the gate electrode 48 may be an aluminum neodymium AlNdelectrode. While particular materials are described, it should beunderstood that the exemplary TFT may include alternative materials.Next, an exemplary method of manufacturing the exemplary TFT will now bedescribed.

FIGS. 4 through 10 are cross-sectional views illustrating an exemplarymethod of manufacturing an exemplary TFT formed on an exemplary flexiblesubstrate according to the present invention.

Referring to FIG. 4, an amorphous silicon (“a-Si”) layer 42 is formed ona substrate 40. The substrate 40 may be a flexible substrate, forexample, a glass substrate. In alternative embodiments, a plasticsubstrate may be used for the substrate 40. The amorphous silicon layer42 can be grown by, for example, an epitaxy growing method. After theamorphous silicon layer 42 is grown, the substrate 40 is annealed undera predetermined condition. Due to the annealing, the amorphous siliconlayer 42 is transformed to a poly silicon layer 44 as depicted in FIG.5. The annealing may be performed using a furnace or using a specificlaser such as an excimer laser. When a furnace is used, the annealingmay be performed at about 200° C. for approximately one hour. At thistime, the temperature and time may be varied.

Referring to FIG. 6, a gate insulating film 46 is formed on the entireupper surface, or substantially the entire upper surface, of the polysilicon layer 44, where a lower surface of the poly silicon layer 44faces the substrate 40. The gate insulating film 46 may be, for example,but not limited to, a silicon dioxide SiO₂ film. A gate electrode 48 isformed on a predetermined region of an upper surface of the gateinsulating film 46, where a lower surface of the gate insulating film 46faces the upper surface of the poly silicon layer 44. The gate electrode48 may be formed of, for example, but not limited to, an aluminumneodymium AlNd electrode etc. A conductive dopant 50 is injected on anupper surface of the resultant product on which the gate electrode 48 isformed. At this time, the ion injection energy may have an intensity sothat the conductive dopant 50 can penetrate the gate insulating film 46but cannot penetrate the gate electrode 48 and the portion of the gateinsulating film 46 underlying the gate electrode 48. The conductivedopant 50 may be, for example, an N+ type dopant. The conductive dopant50 is injected to form a high concentration dopant region on a region ofthe poly silicon layer 44 that is not covered by the gate electrode 48.First and second dopant regions 52 and 54 are formed, as depicted inFIG. 7, due to the injection of the conductive dopant 50 shown in FIG.6. The conductive dopant 50 is not injected to a portion of the polysilicon layer 44 that is covered by the gate electrode 48. Accordingly,the first and second dopant regions 52 and 54 are separated from eachother by as much as the width of the gate electrode 48. Next, exposedportions of the gate insulating film 46, that is, those portions notcovered by the gate electrode 48, are etched using the gate electrode 48as a mask. As a result, as depicted in FIG. 8, the first and seconddopant regions 52 and 54 are exposed, and a gate stack S, that includesthe gate insulating film 46 and the gate electrode 48 having the samewidth as each other, is formed on the substrate 40 between the first andsecond dopant regions 52 and 54. In this structure, a region 55 of thepoly silicon layer 44 below the gate stack S is a channel of the gatestack S, which also may have substantially the same width as the gatestack S. After the exposed portion of the gate insulating film 46 isetched, the poly silicon layer 44 of the resultant product is annealedusing a furnace or a laser, for example, an excimer laser. Due to theannealing, the dopants injected into the first and second dopant regions52 and 54 are uniformly distributed in the entire first and seconddopant regions 52 and 54.

Next, as depicted in FIG. 9, the gate stack S is divided into first andsecond gate stacks S1 and S2. At this time, the first and second gatestacks S1 and S2 are separated by a selected distance D, for example,about 1-5 μm. The division of the gate stack S into the first and secondgate stacks S1 and S2 may be performed using a photolithography method.More specifically, in the photolithography method, two masks (not shown)that cover the poly silicon layer 44 and define the first and secondgate stacks S1 and S2 are formed on the gate stack S with the samedistance as the distance D between the first and second gate stacks S1and S2. Afterwards, the gate stack S is etched using the two masksformed as described above. The etching is continued until the polysilicon layer 44 is exposed between the first and second gate stacks S1and S2. Afterwards, the two masks are removed. The configuration of thefirst and second gate stacks S1 and S2 is identical since the first andsecond gate stacks S1 and S2 are formed from the same gate stack S. Aregion 58 of the poly silicon layer 44 is exposed through a gap betweenthe first and second gate stacks S1 and S2 as the result of theformation of the first and second gate stacks S1 and S2. The region 58of the poly silicon layer 44 exposed through the gap between the firstand second gate stacks S1 and S2 is a region that is not doped with theconductive dopant 50, that is, an off-set region, unlike the first andsecond dopant regions 52 and 54. This is due to the covering of theregion 58 by the electrode 48 during the injection of the conductivedopant 50 shown in FIG. 6. Hereinafter, the region 58 of the polysilicon layer 44 is called as an off-set region. Due to the division ofthe gate stack S into the first and second gate stacks S1 and S2, theregion 55 of the poly silicon layer 44 below the gate stack S depictedin FIG. 8 is divided into a channel region 56 and the off-set region 58,as shown in FIG. 9. The channel region 56 includes a first channelregion 56 a used for a channel of the first gate stack S1 and a secondchannel region 56 b used for a channel of the second gate stack S2. Thefirst channel region 56 a and the second channel region 56 b areseparated from each other by the off-set region 58. After a basicstructure of a TFT is formed, as depicted in FIG. 9, an interlayerinsulating layer 62 covering the first and second gate stacks S1 and S2is formed on the poly silicon layer 44 as shown in FIG. 10. A firstcontact hole 64 that exposes the first dopant region 52 is formed in theinterlayer insulating layer 62, and at the same time, a second contacthole 66 that exposes the second dopant region 54 is formed in theinterlayer insulating layer 62. A first electrode 70 and a secondelectrode 72 are respectively formed on the interlayer insulating layer62 by filling a metal material in the first contact hole 64 and thesecond contact hole 66, such that the first electrode 70 contacts thefirst dopant region 52 of the poly silicon layer 44 and the secondelectrode 72 contacts the second dopant region 54 of the poly siliconlayer 44. The first electrode 70 may be a source electrode, and thesecond electrode 72 may be a drain electrode.

In an alternative embodiment, in the process of dividing the gate stackS of FIG. 8, only the gate electrode 48 may be divided without dividingthe gate insulating film 46. In this case, the first and second gatestacks S1 and S2 commonly use the gate insulating film 46.

While the annealing process of the poly silicon layer 44 has beendescribed as performed after the gate insulating film 46 is etched toform the gate stack S as shown in FIG. 8, alternatively, the annealingfor activating the ion injected dopant may be performed after the firstand second gate stacks S1 and S2 are formed as shown in FIG. 9. That is,after etching the exposed portion of the gate insulating film 46, thefirst and second gate stacks S1 and S2 are formed by dividing the gatestack S, and then, the annealing may be performed. Also, when theannealing is performed using a furnace, the annealing may be performedprior to etching the exposed portion of the gate insulating film 46.Also, the conductive dopant 50 may be injected to the off-set region 58with a concentration lower than the concentration of the first andsecond dopant regions 52 and 54.

As described above, in the present invention, an off-set region isformed between dual gates in a process of forming the dual gates bydividing a single gate after the single gate is formed. Accordingly,even if there is a mis-alignment in a process of forming the singlegate, the off-set region of each device can be uniformly formedregardless of the location of the device. Therefore, the reduction ofcharacteristics, for example, leakage current, of the device accordingto the location difference of an off-set region can be prevented.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it should not beconstrued as being limited to the embodiments set forth herein. Thoseskilled in this art, for example, can use a different flexible substrateinstead of the glass substrate, and can use a single crystal siliconlayer instead of the poly silicon layer. Also, the gate insulating filmand the gate electrode can be formed of other materials instead of SiO₂and AlNd. Also, the scope of the present invention can be applied to abottom type TFT. Therefore, the scope of the invention is defined not bythe detailed description of the invention but by the appended claims.

1. A method of manufacturing a thin film transistor, the methodcomprising: forming a poly silicon layer on a flexible substrate;forming a gate insulating film on the poly silicon layer; forming a gateelectrode on a region of the gate insulating film; injecting aconductive dopant into the poly silicon layer around the gate electrode;forming a gate stack including the gate insulating film and the gateelectrode by removing the gate insulating film around the gateelectrode; and dividing the gate stack into a first gate stack and asecond gate stack by removing a portion of the gate stack.
 2. The methodof claim 1, further comprising, after forming the gate stack, annealingthe poly silicon layer prior to dividing the gate stack into the firstand second gate stacks.
 3. The method of claim 2, wherein annealing thepoly silicon layer includes using a furnace or a laser.
 4. The method ofclaim 1, further comprising, after dividing the gate stack into thefirst and second gate stacks, annealing the poly silicon layer.
 5. Themethod of claim 4, wherein annealing the poly silicon layer includesusing a furnace or a laser.
 6. The method of claim 1, furthercomprising, after injecting the conductive dopant, annealing the polysilicon layer prior to removing the gate insulating film.
 7. The methodof claim 6, wherein annealing the poly silicon layer includes using afurnace.
 8. The method of claim 1, wherein removing a portion of thegate stack separates the first and second gate stacks by a distance ofabout 1 μm to about 5 μm.
 9. The method of claim 1, wherein forming apoly silicon layer on a flexible substrate further comprises: forming anamorphous silicon layer on the flexible substrate; and annealing theamorphous silicon layer.
 10. The method of claim 9, wherein annealingthe amorphous silicon layer includes using a furnace or a laser.
 11. Themethod of claim 1, further comprising; forming an interlayer insulatinglayer covering the first and second gate stacks on the poly siliconlayer; forming contact holes in the interlayer insulating layer toexpose regions of the poly silicon layer to which the conductive dopantis injected; and forming electrodes filling the contact holes on theinterlayer insulating layer.
 12. The method of claim 1, wherein dividingthe gate stack into a first gate stack and a second gate stack includesremoving a portion of the gate stack until the poly silicon layer isexposed.